Samsung / DDR2 / 2 GB / SO-DIMM 200-pin / 800 MHz / PC2-6400 / CL6 / 1.8 V / unbuffered / non-ECC | M470T5663QZ3-CF7

M470T5663QZ3-CF7
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Product Code03:522483 ManufacturerSamsung

Samsung / DDR2 / 2 GB / SO-DIMM 200-pin / 800 MHz / PC2-6400 / CL6 / 1.8 V / unbuffered / non-ECC | M470T5663QZ3-CF7

Description

The need for increased server performance is unrelenting, thus DDR2 SDRAM has taken its place as the high-density standard for server main memory. Its advanced architecture gives DDR2 a host of advantages over earlier standards, such as faster speeds, better signal integrity, lower power consumption and better thermal characteristics.This advanced server memory architecture buffers the DRAM data pins from the channel and uses point-to-point links to eliminate the need for a stub bus. The buffers and repeaters help reduce the motherboard routing area. This architecture requires one-third fewer pins than registered DIMMs and also delivers excellent throughput and low latency.

Special Features

  • DDR2 features optimize server performance
  • Powerful RAS features

Product features

  • DDR2 features optimize server performance
    The need for increased server performance is unrelenting, thus DDR2 SDRAM has taken its place as the high-density standard for server main memory. Its advanced architecture gives DDR2 a host of advantages over earlier standards, such as faster speeds, better signal integrity, lower power consumption and better thermal characteristics.
  • Powerful RAS features
    With system reliability as essential in servers as they take on an ever-greater workload, the FB DIMM architecture helps deliver exceptional reliability. Most notable is a silent data error rate of one per 100 years or less, enabled by a robust CRC scheme that protects both commands and data. Also boosting reliability are features such as transient bit-error detection and retry and "bit-lane fail-over correction". This enables the server board to shut down a bad data path on the fly.

Product Specification

Capacity 2 GB
Upgrade Type Generic
Type DRAM
Technology DDR2 SDRAM
Form Factor SO-DIMM 200-pin
Module Height (inch) 1.18
Speed 800 MHz ( PC2-6400 )
Latency Timings CL6 ( 6-6-6 )
Access Time 2.5 ns
Data Integrity Check Non-ECC
Features 8K refresh, dual rank , unbuffered
Module Configuration 256 x 64
Chips Organization 128 x 8
Voltage 1.8 V
Compatible Slots 1 x memory - SO-DIMM 200-pin
Compliant Standards RoHS

Χαρακτηριστικά
Product Code
03:522483
EAN Code
-
Manufacturer
Samsung
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