Samsung / DDR2 / 2 GB / SO-DIMM 200-pin / 800 MHz / PC2-6400 / CL6 / 1.8 V / unbuffered / non-ECC | M470T5663QZ3-CF7
Samsung / DDR2 / 2 GB / SO-DIMM 200-pin / 800 MHz / PC2-6400 / CL6 / 1.8 V / unbuffered / non-ECC | M470T5663QZ3-CF7
Description The need for increased server performance is unrelenting, thus DDR2 SDRAM has taken its place as the high-density standard for server main memory. Its advanced architecture gives DDR2 a host of advantages over earlier standards, such as faster speeds, better signal integrity, lower power consumption and better thermal characteristics.This advanced server memory architecture buffers the DRAM data pins from the channel and uses point-to-point links to eliminate the need for a stub bus. The buffers and repeaters help reduce the motherboard routing area. This architecture requires one-third fewer pins than registered DIMMs and also delivers excellent throughput and low latency. Special Features
Product features
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Product Specification
Capacity | 2 GB |
Upgrade Type | Generic |
Type | DRAM |
Technology | DDR2 SDRAM |
Form Factor | SO-DIMM 200-pin |
Module Height (inch) | 1.18 |
Speed | 800 MHz ( PC2-6400 ) |
Latency Timings | CL6 ( 6-6-6 ) |
Access Time | 2.5 ns |
Data Integrity Check | Non-ECC |
Features | 8K refresh, dual rank , unbuffered |
Module Configuration | 256 x 64 |
Chips Organization | 128 x 8 |
Voltage | 1.8 V |
Compatible Slots | 1 x memory - SO-DIMM 200-pin |
Compliant Standards | RoHS |