Αρχική Σελίδα/Σκληροί Δίσκοι/Σκληροί δίσκοι ( HDD - SSD )/Samsung 860 EVO MZ-M6E250BW / Solid state drive / encrypted / 250 GB / internal / mSATA / SATA 6Gb/s / buffer: 512 MB / 256-bit AES / TCG Opal Encryption 2.0 | MZ-M6E250BW

Samsung 860 EVO MZ-M6E250BW / Solid state drive / encrypted / 250 GB / internal / mSATA / SATA 6Gb/s / buffer: 512 MB / 256-bit AES / TCG Opal Encryption 2.0 | MZ-M6E250BW

Μάρκα: Samsung

Γράψτε μια κριτική

ΚΩΔΙΚΟΣ (SKU):

MZ-M6E250BW

€65.57 €72.86

€78.03 με Φ.Π.Α.

Μη Διαθέσιμο

Product Code07:103109 EAN Code8801643076351 ManufacturerSamsung Form FactorInternal, 2.5" Μέγεθος250GB InterfacemSata

Sales 10%

Find similar

Delivery

Payment options

Description

The Samsung 860 EVO is specially designed for mainstream PCs and laptops with V-NAND and a robust algorithm-based controller.

Special Features

Product features

Enhanced performance
Speeds are more consistent, even with heavy workloads and multi-tasks. The 860 EVO performs fast with Intelligent TurboWrite technology.
Boosted endurance
Safely store and render large sized videos and 3D data. The V-NAND technology gives you a lot of space.

Product Specification

Device Type	Solid state drive - internal
Capacity	250 GB
Hardware Encryption	Yes
Encryption Algorithm	256-bit AES
NAND Flash Memory Type	3D multi-level cell (MLC)
Form Factor	mSATA
Interface	SATA 6Gb/s
Buffer Size	512 MB
Features	TRIM support, Auto Garbage Collection Algorithm, TurboWrite Technology, eDrive, Samsung MJX Controller, 3-bit 3D V-NAND Technology, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES, IEEE 1667
Width	29.85 mm
Depth	50.8 mm
Height	3.85 mm
Weight	8.5 g
Drive Transfer Rate	600 MBps (external)
Internal Data Rate	550 MBps (read) / 520 MBps (write)
Maximum 4KB Random Write	88000 IOPS
Maximum 4KB Random Read	97000 IOPS
MTBF	1,500,000 hours
Interfaces	1 x SATA 6 Gb/s
Compatible Bay	mSATA
Power Consumption	2.2 Watt (average) ¦ 4.5 Watt (maximum)
Service & Support	Limited warranty - 5 years / 150 TBW
Min Operating Temperature	0 °C
Max Operating Temperature	70 °C
Shock Tolerance (operating)	1500 g @ 0.5 ms half-sine