Samsung 970 EVO Plus MZ-V75S500BW / Solid state drive / encrypted / 500 GB / internal / M.2 2280 / PCI Express 3.0 x4 (NVMe) / buffer: 512 MB / 256-bit AES / TCG Opal Encryption | MZ-V7S500BW

MZ-V7S500BW
95.53 106.15
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Product Code07:334061 EAN Code8801643628116 ManufacturerSamsung Form Factor2.5", Internal Μέγεθος500GB InterfaceM.2
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Samsung 970 EVO Plus MZ-V75S500BW / Solid state drive / encrypted / 500 GB / internal / M.2 2280 / PCI Express 3.0 x4 (NVMe) / buffer: 512 MB / 256-bit AES / TCG Opal Encryption | MZ-V7S500BW

Description

The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by Samsung's V-NAND technology and firmware optimization. It maximizes the potential of NVMe bandwidth for superb computing.

 

Samsung 970 EVO Plus MZ-V75S500BW / Solid state drive | MZ-V7S500BW

Special Features

  • V-NAND technology
  • Dynamic Thermal Guard
  • Intelligent TurboWrite

Product features

  • Level up performance
    Samsung's V-NAND technology - which brings greater NAND performance and higher power efficiency - along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost speeds.
  • Design flexibility
    The 970 EVO Plus fits high capacity onto the compact M.2 (2280) form factor, greatly expanding storage capacity and saving space for other components. Samsung's innovative technology empowers you with the capacity to do more and accomplish more.
  • Unparalleled reliability
    Achieve a new level of drive confidence. Samsung's advanced nickel-coated controller and heat spreader on the 970 EVO Plus enable remarkable heat dissipation. The Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to help minimize performance drops.

Product Specification

Device Type Solid state drive - internal
Capacity 500 GB
Hardware Encryption Yes
Encryption Algorithm 256-bit AES
NAND Flash Memory Type Triple-level cell (TLC)
Form Factor M.2 2280
Interface PCI Express 3.0 x4 (NVMe)
Buffer Size 512 MB
Features TRIM support, sleep mode, Auto Garbage Collection Algorithm, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller, S.M.A.R.T.
Width 22.15 mm
Depth 80.15 mm
Height 2.38 mm
Weight 8 g
SSD Endurance 300 TB
Internal Data Rate 3500 MBps (read) / 3200 MBps (write)
4KB Random Read 19000 IOPS
4KB Random Write 60000 IOPS
Maximum 4KB Random Write 550000 IOPS
Maximum 4KB Random Read 480000 IOPS
MTBF 1,500,000 hours
Interfaces PCI Express 3.0 x4 (NVMe) - M.2 Card
Compatible Bay M.2 2280
Power Consumption 5.8 Watt (average) ¦ 9 Watt (maximum) ¦ 30 mW (idle max)
Compliant Standards IEEE 1667
Service & Support Limited warranty - 5 years
Min Operating Temperature 0 °C
Max Operating Temperature 70 °C
Shock Tolerance (operating) 1500 g @ 0.5 ms half-sine

Form Factor
  • 2.5"
  • Internal
Μέγεθος
500GB
Interface
  • M.2
Χαρακτηριστικά
Product Code
07:334061
EAN Code
8801643628116
Manufacturer
Samsung

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